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| Transistors with built-in Resistor UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 0.15 For switching 6.90.1 0.7 4.0 1.05 2.50.1 0.05 (1.45) 0.8 0.65 max. q 0.45-0.05 +0.1 Parameter Collector to base voltage UN8231 UN8231A Symbol VCBO VCEO ICP IC PT* Tj Tstg Ratings 20 60 20 50 1.5 0.7 1 150 -55 to +150 Unit V UN8231 Collector to emitter voltage UN8231A Peak collector current Collector current Total power dissipation Junction temperature Storage temperature 1 : Emitter 2 : Collector 3 : Base MT-2 Type Package V A A W C C R1(1k) Internal Connection 2.50.1 s Absolute Maximum Ratings 1 2 3 (Ta=25C) 0.45-0.05 +0.1 2.50.5 2.50.5 C B R2 (47k) * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. E s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to base voltage UN8231 UN8231A UN8231 UN8231A (Ta=25C) Symbol ICBO ICEO IEBO VCBO VCEO hFE* VCE(sat)* R1 R1/R2 fT VCB = 10V, IE = -50mA, f = 200MHz Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 VEB = 14V, IC = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 VCE = 10V, IC = 150mA IC = 500mA, IB = 5mA 0.7 0.016 1 0.021 200 20 60 20 50 800 2100 0.4 1.3 0.025 MHz *Pulse measurement V k min typ max 1 10 0.5 Unit A A mA V Collector to emitter voltage 14.50.5 q 1.0 1.0 q High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and reduction of the number of parts. Available in a type with radial taping. 0.2 s Features 0.5 4.50.1 V Forward current transfer ratio Collector to emitter saturation voltage Input resistance Resistance ratio Transition frequency 1 Transistors with built-in Resistor PT -- Ta 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 0 0 2 4 6 8 10 12 1.2 UN8231/UN8231A IC -- VCE 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=100 Total power dissipation PT (W) Collector current IC (A) Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. 1.0 IB=1.2mA 1.0mA 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C 0.8 0.8mA 0.6mA 0.4mA 0.6 0.4 0.2mA 0.2 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) hFE -- IC 2400 Cob -- VCB Collector output capacitance Cob (pF) 10 VCE=10V 30 Forward current transfer ratio hFE 2000 25 1600 25C 1200 Ta=75C 20 15 -25C 800 10 400 5 0 0.01 0.03 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 Collector current IC (A) Collector to base voltage VCB (V) 2 |
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